Low activation energy field-effect transistors fabricated by bar-assisted meniscus shearing

نویسندگان

چکیده

Here, we study the temperature-dependent transport properties of OFETs with prototypical OSC 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) co-processed polystyrene (PS) as active layer. The layer is deposited directly on SiO2 using bar-assisted meniscus shearing (BAMS) method. co-processing PS favors a consequential decrease in interfacial trap densities previously reported. Furthermore, demonstrate how this processing method leads to devices exhibiting activation energies well below current state art for TIPS-pentacene or other dielectrics. Altogether, our reports thin films an energy (Ea) low 15 meV when material blended and processed via BAMS. Such unprecedentedly value originates not only from but also trapping much shallower than reported elsewhere same material. This allows us clarify notion that significant passivation traps occurs following separation into individual at interface insulator confirm enhanced synergistic effect wherein both density depth are reduced.

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ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2021

ISSN: ['1520-8842', '0003-6951', '1077-3118']

DOI: https://doi.org/10.1063/5.0059735